Class 12 Physics Chapter 14 objective type / mcq question answer of Semiconductor Electronics : Materials, Devices and Simple Circuits NCERT Solution in Hindi. NCERT Class 12 Physics MCQ Question Answer and Important Question Answer, Textual Question answer also Available for Various Board Students like HBSE, CBSE, UP board, Mp Board, RBSE and some other State Boards.
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NCERT Solution for Class 12 Physics Chapter 14 Semiconductor Electronics : Materials, Devices and Simple Circuits MCQ Question Answer.
Semiconductor Electronics : Materials, Devices and Simple Circuits Class 12 MCQ Question Answer
1. Which dopant cannot be used to make silicon (Si) a p-type semi-conductor ?
(A) In
(B) Al
(C) B
(D) P
Answer
Ans. (D) P
2. Name the optoelectronic device used to detect optical signals?
(A) Zener Diode
(B) Photo Diode
(C) Laser Diode
(D) PN junction Diode
Answer
Ans. (B) Photo Diode
3. Name the optoelectronic device which convert optical radiation into electricity?
(A) Laser Diode
(B) Photo Diode
(C) Laser Diode
(D) PN junction Diode
Answer
Ans. (D) PN junction Diode
4. Name the optoelectronic device that convert electrical energy into light ?
(A) Photo Diode
(B) Laser Diode
(C) PN junction Diode
(D) Zener Diode
Answer
Ans. (B) Laser Diode
5. A zener diode has ….. .
(A) heavily doped p-side and lightly doped n-side.
(B) heavily doped n-side and lightly doped p-side.
(C) heavily doped n-side as well as p-side.
(D) lightly doped n-side as well as p-side
Answer
Ans. (C) heavily doped n-side as well as p-side.
6. Which dopant cannot be used to make silicon (Si) an n-type semi-conductor ?
(A) B
(B) As
(C) P
(D) Sb
Answer
Ans. (A) B
7. Name a semiconductor device which can be used as a voltage regulator ?
(A) PN junction diode
(B) Laser Diode
(C) Zener Diode
(D) None of the above
Answer
Ans. (C) Zener Diode
8. In a n-type Semi Conductor the minority charge carriers are :
(A) Electron
(B) Hole
(C) Electron and hole
(D) None of these
Answer
Ans. (B) Hole
9. At equilibrium, in a p-n junction diode the net current is –
(A) due to diffusion of majority charge carriers.
(B) due to drift of minority charge carriers.
(C) zero as diffusion and drift currents are equal and opposite.
(D) zero as no charge carriers cross the junction.
Answer
Ans. (C) zero as diffusion and drift currents are equal and opposite.
10. In an n-type semiconductor, the donor energy level lies
(A) at the centre of the energy gap.
(B) just below the conduction band.
(C) just above the valance band.
(D) in the conduction band.
Answer
Ans. (B) just below the conduction band.